Electrothermal Effects on Hot Carrier Injection Reliability of n-Type FinFETs in Ring Oscillators-Reference-Cited by-同舟云学术

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Electrothermal Effects on Hot Carrier Injection Reliability of n-Type FinFETs in Ring Oscillators

Published:2024-02 Issue:2 Volume:71 Page:1191-1198
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Min Qiu¹^ORCID,Li Er-Ping¹^ORCID,Wang Yi-Min¹^ORCID,Chen Wenchao¹^ORCID

Affiliation:

1. College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, China

Funder

National Natural Science Foundation of China

Zhejiang Laboratory Project Fund

Zhejiang Provincial Natural Science Foundation of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/16/10413236/10382433.pdf?arnumber=10382433

Reference45 articles.

1. A 22nm high performance and low-power CMOS technology featuring fully-depleted tri-gate transistors, self-aligned contacts and high density MIM capacitors

2. BSIM—SPICE Models Enable FinFET and UTB IC Designs

3. Physical Insight Toward Heat Transport and an Improved Electrothermal Modeling Framework for FinFET Architectures

4. Analytical Thermal Model for Self-Heating in Advanced FinFET Devices With Implications for Design and Reliability

5. A Device-to-System Perspective Regarding Self-Heating Enhanced Hot Carrier Degradation in Modern Field-Effect Transistors: A Topical Review

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