Determination of substrate doping, substrate carrier lifetime and density of surface recombination centres of MOSFETs by gate-controlled-diode measurements-Reference-Cited by-同舟云学术

Determination of substrate doping, substrate carrier lifetime and density of surface recombination centres of MOSFETs by gate-controlled-diode measurements

Published:1996-05-01 Issue:5 Volume:11 Page:672-678
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Chen T P,Chan D S H,Chim W K

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference6 articles.

1. Surface effects on p-n junctions: Characteristics of surface space-charge regions under non-equilibrium conditions

2. Carrier Generation and Recombination in P-N Junctions and P-N Junction Characteristics

3. Statistics of the Recombinations of Holes and Electrons

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1. Gate oxide thickness dependence of edge charge trapping in nmos transistors caused by charge injection under constant-current stress;IEEE Transactions on Electron Devices;2003-06

2. Influence of interfacial nitrogen on edge charge trapping at the interface of gate oxide/drain extension in metal–oxide–semiconductor transistors;Applied Physics Letters;2003-05-05

3. A novel approach to quantitative determination of charge trapping near channel/drain edge in MOSFETs;Solid-State Electronics;2002-11

4. Characterization of interface degradation in deep submicron MOSFETs by gate-controlled-diode measurement;Microelectronics Journal;2002-08

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