Thermally stimulated defect removal in hydrogenated amorphous silicon thin film transistors
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference10 articles.
1. Bias‐stress‐induced creation and removal of dangling‐bond states in amorphous silicon thin‐film transistors
2. Thermal bias annealing evidence for the defect pool in amorphous silicon thin‐film transistors
3. The role of the gate insulator in the defect pool model for hydrogenated amorphous silicon thin film transistor characteristics
4. Annealing kinetics in amorphous silicon field-effect transistors
5. Defect relaxation in amorphous silicon: Stretched exponentials, the Meyer-Neldel rule, and the Staebler-Wronski effect
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1. Current Degradation of a-Si:H/SiN TFTs at Room Temperature and Low Voltages;IEEE Transactions on Electron Devices;2006-09
2. Characterization of defect removal in hydrogenated and deuterated amorphous silicon thin film transistors;Journal of Non-Crystalline Solids;2006-06
3. Microscopic mechanisms for creation and removal of metastable dangling bonds in hydrogenated amorphous silicon;Physical Review B;2002-10-31
4. Effect of amorphous silicon material properties on the stability of thin film transistors: evidence for a local defect creation model;Journal of Non-Crystalline Solids;2000-05
5. The isochronal annealing study on the bias stressed amorphous silicon thin film transistors;Journal of Non-Crystalline Solids;1996-05
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