Annealing kinetics in amorphous silicon field-effect transistors
Author:
Affiliation:
1. a Department of Physics , Korea Advanced Institute of Science and Technology , P.O. Box 150, Cheongryangri , Seoul , Korea
2. b R and D Center, SAMSUNG Electronics, Co. , Ki Hung, Yong In Gun, Kyung Ki Do, Korea
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/13642819208217911
Reference13 articles.
1. Role of band-tail carriers in metastable defect formation and annealing in hydrogenated amorphous silicon
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3. Role of hydrogen in the formation of metastable defects in hydrogenated amorphous silicon
4. Creation of near-interface defects in hydrogenated amorphous silicon-silicon nitride heterojunctions: The role of hydrogen
5. Stretched-exponential relaxation arising from dispersive diffusion of hydrogen in amorphous silicon
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