The isochronal annealing study on the bias stressed amorphous silicon thin film transistors-Reference-Cited by-同舟云学术

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The isochronal annealing study on the bias stressed amorphous silicon thin film transistors

Published:1996-05 Issue: Volume:198-200 Page:499-502
ISSN:0022-3093
Container-title:Journal of Non-Crystalline Solids
language:en
Short-container-title:Journal of Non-Crystalline Solids

Author:

Hwang Chi-Sun,Bae Byung Seong,Lee Choochon

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. Annealing kinetics in amorphous silicon field-effect transistors

2. Annealing behavior of metastable defects created by bias stress in hydrogenated amorphous silicon thin film transistors

3. Thermally stimulated defect removal in hydrogenated amorphous silicon thin film transistors

4. Defect relaxation in amorphous silicon: Stretched exponentials, the Meyer-Neldel rule, and the Staebler-Wronski effect

5. Stretched-exponential relaxation arising from dispersive diffusion of hydrogen in amorphous silicon

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Trap States of the Oxide Thin Film Transistor;Japanese Journal of Applied Physics;2013-10-01

2. Trap States of a-ZnO Thin Film Transistors;Electronic Materials Letters;2010-12-31

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