Effect of amorphous silicon material properties on the stability of thin film transistors: evidence for a local defect creation model-Reference-Cited by-同舟云学术

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Effect of amorphous silicon material properties on the stability of thin film transistors: evidence for a local defect creation model

Published:2000-05 Issue: Volume:266-269 Page:459-463
ISSN:0022-3093
Container-title:Journal of Non-Crystalline Solids
language:en
Short-container-title:Journal of Non-Crystalline Solids

Author:

Wehrspohn R.B.,Deane S.C.,French I.D.,Powell M.J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. Resolution of amorphous silicon thin‐film transistor instability mechanisms using ambipolar transistors

2. Stability of Amorphous Silicon Thin Film Transistors

3. Urbach energy dependence of the stability in amorphous silicon thin-film transistors

4. Unification of the time and temperature dependence of dangling-bond-defect creation and removal in amorphous-silicon thin-film transistors

5. Role of hydrogen in the formation of metastable defects in hydrogenated amorphous silicon

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