Urbach energy dependence of the stability in amorphous silicon thin-film transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.123349
Reference17 articles.
1. Bias‐stress‐induced stretched‐exponential time dependence of charge injection and trapping in amorphous thin‐film transistors
2. Electrical Instability of Hydrogenated Amorphous Silicon Thin-Film Transistors for Active-Matrix Liquid-Crystal Displays
3. Resolution of amorphous silicon thin‐film transistor instability mechanisms using ambipolar transistors
4. Schottky-contact gated-four-probe a-Si:H TFT structure: a new structure to investigate the electrical instability of a-Si:H TFT
5. Theoretical and experimental study of the quasistatic capacitance of metal-insulator–hydrogenated amorphous silicon structures: Strong evidence for the defect-pool model
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