Optical and electrical properties of In2MgO4 thin film for transistors-Reference-Cited by-同舟云学术

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Optical and electrical properties of In2MgO4 thin film for transistors

Published:2018-10-17 Issue:11 Volume:8 Page:3438
ISSN:2159-3930
Container-title:Optical Materials Express
language:en
Short-container-title:Opt. Mater. Express

Author:

Yao Jian Ke,Ye Fan,Fan Ping

Funder

National Natural Science Foundation of China (NSFC)

Science and Technology Plan of Shenzhen

Shenzhen Key Lab Fund

Publisher

The Optical Society

Subject

Electronic, Optical and Magnetic Materials

Reference34 articles.

1. New oxide phase with wide band gap and high electroconductivity, MgIn2O4

2. Carrier control in transparent semiconducting oxide thin films by ion implantation: MgIn2O4 and ZnO

3. Generation of electron carriers in insulating thin film of MgIn2O4spinel by Li+implantation

4. Conversion of insulating thin films of MgIn2O4 into transparent conductors by ion implantation

5. Enhancement of carrier generation in MgIn2O4 thin film prepared by pulsed laser deposition technique

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structural, Electronic, and Magnetic Properties of NiGa2O4;Journal of Electronic Materials;2022-06-07

2. Investigation of MgIn2O4 MSM UV Photodetector With Different Oxygen Flow Ratios and Post-Annealing Temperatures;ECS Journal of Solid State Science and Technology;2021-05-01

3. Enhancing the Performance of Solution-Processed Thin-Film Transistors via Laser Scanning Annealing;ACS Applied Electronic Materials;2020-08-25

4. Temperature-dependent optical and electrical properties of InGaZnON thin films;Optical Materials Express;2019-08-26

5. Ultraviolet laser damage mechanisms of amorphous InGaZnO4 thin films;Optical Materials Express;2019-05-10

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