P-28: Study on One Infrequent Influencing Factor of TFT-LCD Life
Author:
Affiliation:
1. Beijing BOE Display Technology Corporation; Beijing China
Publisher
Wiley
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1002/j.2168-0159.2014.tb00272.x/fullpdf
Reference8 articles.
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2. “Bias-stress-induced stretched-exponential time dependence of charge injection and trapping in amorphous thin-film transistors,”;Libsch;Appl. Phys. Lett.,1993
3. “Reversible conductivity changes in discharge-produced amorphous Si,”;Staebler;Appl. Phys. Lett.,1977
4. “Photofield effect in amorphous silicon thin film transistors,”;Berkel;J. Appl. Phys.,1986
5. “Effect of amorphous silicon material properties on the stability of thin film transistors: evidence for a local defect creation model,”;Wehrspohn;Journal of Non-Crystalline Solids,2000
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