Unification of the time and temperature dependence of dangling-bond-defect creation and removal in amorphous-silicon thin-film transistors
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.58.12625/fulltext
Reference13 articles.
1. Charge trapping instabilities in amorphous silicon‐silicon nitride thin‐film transistors
2. Resolution of amorphous silicon thin‐film transistor instability mechanisms using ambipolar transistors
3. Defect pool in amorphous-silicon thin-film transistors
4. Stretched-exponential relaxation arising from dispersive diffusion of hydrogen in amorphous silicon
5. Role of band-tail carriers in metastable defect formation and annealing in hydrogenated amorphous silicon
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