X-ray spectroscopic study of the electronic structure of amorphous SiNx:H (0.04 ≲ x ≲ 0.44)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference2 articles.
1. Electrical properties of glow discharge amorphous SiNx: H thin films
2. Electronic structure of hydrogenated and unhydrogenated amorphousSiNx (0≤x≤1.6): A photoemission study
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1. Study on Er3+ emission from the erbium-doped hydrogenated amorphous silicon suboxide film;Journal of Applied Physics;2003-11
2. Studies of Solid Interfaces Using Soft X-ray Emission Spectroscopy;Critical Reviews in Solid State and Materials Sciences;1998-06
3. Ultrasoft X-Ray Emission Spectroscopic Analysis for Effects of Vacuum Ultraviolet Rare Gas Excimer Laser Irradiation on Silicon Nitride Films;Japanese Journal of Applied Physics;1994-11-01
4. Analysis of the electronic and local structure of amorphousSiNx:H alloy films in terms of SiK, SiL, and NKx-ray emission bands;Physical Review B;1994-02-15
5. Analysis of dc-sputtered Si3N4-films using X-ray diffraction and computer simulation;Journal of Non-Crystalline Solids;1993-09
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