Electronic structure of hydrogenated and unhydrogenated amorphousSiNx (0≤x≤1.6): A photoemission study
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.30.1896/fulltext
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1. The preparation, characterization and applications of silicon nitride thin films
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4. Silicon nitride trap properties as revealed by charge−centroid measurements on MNOS devices
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