Silicon nitride trap properties as revealed by charge−centroid measurements on MNOS devices-Reference-Cited by-同舟云学术

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Silicon nitride trap properties as revealed by charge−centroid measurements on MNOS devices

Published:1975-02 Issue:3 Volume:26 Page:94-96
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Arnett P. C.,Yun B. H.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.88093

Reference4 articles.

1. Direct display of electron back tunneling in MNOS memory capacitors

2. Measurements of charge propagation in Si3N4 films

3. Nonlinear Absorbers of Light

4. Poole-Frenkel Effect and Schottky Effect in Metal-Insulator-Metal Systems

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