Photoacoustic spectra of amorphous semiconductors Ge20S80−xBix
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference17 articles.
1. Gap-State Profiles of a-Si: H Deduced from Below-Gap Optical Absorption
2. Evidence of two Bi sites from EPR ofMn2+in Bi-doped amorphous germanium chalcogenides
3. Mechanism for Doping in Bi Chalcogenide Glasses
4. Optical constants of doped n-type vitreous semiconductors (GeSe3.5)100−xBix
5. Bismuth-doped amorphous germanium sulfide semiconductors
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Composition and thermal-induced effects on the optical constants of Ge20Se80−xBix thin films;Physica B: Condensed Matter;2007-03
2. Effect of composition and deposition parameters on optical properties of Ge25Sb15−xBixS60 thin films;Thin Solid Films;2003-01
3. Photoacoustic measurement of the thermal diffusivity of Bi added Ge–Se and Ge–Se–Te glasses;Solid State Communications;1998-09
4. Mn-impurity-induced simple pair defect states in Bi-modified amorphous semiconductors Ge20S79·5-xBixMn0·5;Philosophical Magazine B;1990-06
5. Frequency dependent electrical transport in bismuth-modified amorphous germanium sulfide semiconductors;Journal of Non-Crystalline Solids;1990-04
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