Evidence of two Bi sites from EPR ofMn2+in Bi-doped amorphous germanium chalcogenides
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.35.4503/fulltext
Reference18 articles.
1. Thermally quenched and generated paramagnetism in Ge42S58 glass
2. States in the gap and recombination in amorphous semiconductors
3. Valence-Alternation Model for Localized Gap States in Lone-Pair Semiconductors
4. Structural changes induced by Bi doping in n-type amorphous (GeSe3.5) 100−xBix
5. On the glass formation tendency in (PbS)x·(M2S3)1−x (M = As, Sb)
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1. Glass transformation studies in Ge-Se-Bi system;Glass Physics and Chemistry;2007-12
2. Amorphous Bi-Ge-S(Se) Systems Studied by X-Ray Ge K Emission and Absorption Bands;Acta Physica Polonica A;1994-11
3. Temperature and thickness dependence of photoconductivity and density-of-states distribution for Bi doped Ge20S80;Vacuum;1994-08
4. X-ray Ge K bands of Bi-Ge-S and Sb-Ge-S glasses;Journal of Physics: Condensed Matter;1993-08-09
5. EPR of Mn-doped Pb-modified amorphous germanium chalcogenide semiconductors;Journal of Non-Crystalline Solids;1992-01
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