Thermally quenched and generated paramagnetism in Ge42S58 glass
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference13 articles.
1. Model for the Electronic Structure of Amorphous Semiconductors
2. ESR in GeS glasses
3. Effect of Impurities on ESR Spectrum in Ge-S Glass
4. On the Property and Origin of Paramagnetic Defects in Amorphous Ge–S and Ge–S–Ag
5. Effects of alloying chalcogen atoms into a-Ge films and defect states in GeS
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1. Influence of Pb incorporation on light-induced phenomena in amorphous Ge100−x−yPbxSy thin films;Journal of Non-Crystalline Solids;1997-09
2. Electronic conduction in vitreous semiconductors in the pseudo-binary system (As2S3)1-x(PbS)x;Journal of Non-Crystalline Solids;1995-01
3. GexS1−x glasses. II. Synthesis conditions and defect formation;Journal of Non-Crystalline Solids;1992-01
4. Nature of electrical transport in ambipolar amorphous semiconductors (PbS) x (GeS)0.7-x (GeS2)0.3;Philosophical Magazine B;1991-02
5. GexS1−x glasses. Defects, density and structure;Journal of Non-Crystalline Solids;1990-09
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