Nature of electrical transport in ambipolar amorphous semiconductors (PbS) x (GeS)0.7-x (GeS2)0.3
Author:
Affiliation:
1. a Physics Department , Maharshi Dayanand University , Rohtak , 124001 , India
2. b Physics Department , A.I. Jat. H.M. College , Rohtak , 124001 , India
3. c Physics Department , Vaish College , Bhiwani , 125021 , India
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/13642819108205961
Reference18 articles.
1. Structure and photoelectric behavior of amorphous semiconductors in the system PbSGeSGeS2
2. Optical absorption edge spectra of amorphous ambipolar semiconductors (PbS)x(GeS)0.7−x(GeS2)0.3
3. Carrier-sign reversal in Bi-doped bulk amorphous semiconductorsGe20Te80−xBix
4. Frequency dependent electrical transport in bismuth-modified amorphous germanium sulfide semiconductors
5. Electron-spin resonance ofMn2+in Ge-rich bismuth-modified amorphous semiconductors(Ge42S58)99.5−xBixMn0.5
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1. Glass formation and physical properties of chalcogenide glasses in Ge–S–Pb system;Infrared Physics & Technology;2014-03
2. Alternating-current conductivity and dielectric properties of Ge25Sb15-xBixS60bulk and thin-film glasses;Journal of Physics: Condensed Matter;2002-01-31
3. Influence of Pb incorporation on light-induced phenomena in amorphous Ge100−x−yPbxSy thin films;Journal of Non-Crystalline Solids;1997-09
4. Electronic conduction in vitreous semiconductors in the pseudo-binary system (As2S3)1-x(PbS)x;Journal of Non-Crystalline Solids;1995-01
5. Correlation between a.c. transport and electron spin resonance in amorphous Ge-S films alloyed with lead;Philosophical Magazine B;1994-11
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