Correlation between a.c. transport and electron spin resonance in amorphous Ge-S films alloyed with lead-Reference-Cited by-同舟云学术

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Correlation between a.c. transport and electron spin resonance in amorphous Ge-S films alloyed with lead

Published:1994-11 Issue:5 Volume:70 Page:1035-1044
ISSN:1364-2812
Container-title:Philosophical Magazine B
language:en
Short-container-title:Philosophical Magazine B

Author:

Shimakawa Koichi¹,Kato Takeharu¹²,Hayashi Koji¹³,Masuda Atsushi⁴,Kumeda Minoru⁴,Shimrzu Tatsuo⁴

Affiliation:

1. a Department of Electronics and Computer Engineering , Gifu University , Gifu , 501-11 , Japan

2. c Nikon Corporation , Tokyo , 100 , Japan

3. d Institute for Molecular Science , Okazaki , 444 , Japan

4. b Faculty of Technology , Kanazawa University , Kanazawa , 920 , Japan

Publisher

Informa UK Limited

Subject

General Physics and Astronomy,General Chemical Engineering

Link

https://www.tandfonline.com/doi/pdf/10.1080/01418639408240271

Reference21 articles.

1. Structure and photoelectric behavior of amorphous semiconductors in the system PbSGeSGeS2

2. Photoinduced Defects in Chalcogenide Glasses

3. A theory of a.c. conduction in chalcogenide glasses

4. Model for bond-breaking mechanisms in amorphous arsenic chalcogenides leading to light-induced electron-spin resonance

5. Glass formation and structure of chalcogenide systems XXIV. The model of charged dangling bonds in liquid and vitreous inorganic systems

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Photoluminescence excitation process and optical absorption in Ge–S chalcogenide glasses;Journal of Non-Crystalline Solids;2003-08

2. Electronic transport;Advances in Condensed Matter Science;2003-04-10

3. Photoluminescence and states in the bandgap of germanium sulfide glasses;Journal of Non-Crystalline Solids;2003-01

4. Influence of Pb incorporation on light-induced phenomena in amorphous Ge100−x−yPbxSy thin films;Journal of Non-Crystalline Solids;1997-09

5. Photoinduced effects and metastability in amorphous semiconductors and insulators;Advances in Physics;1995-12

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