EPR of Mn-doped Pb-modified amorphous germanium chalcogenide semiconductors
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference27 articles.
1. Carrier-sign reversal in Bi-doped bulk amorphous semiconductorsGe20Te80−xBix
2. Bismuth-doped amorphous germanium sulfide semiconductors
3. Mechanism for Doping in Bi Chalcogenide Glasses
4. Electrical properties of n-type semiconducting chalcogenide glasses in the system Pb-Ge-Se
5. Optical absorption edge spectra of amorphous ambipolar semiconductors (PbS)x(GeS)0.7−x(GeS2)0.3
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1. Investigation of optical properties of GexSe80−xPb20films;Journal of Physics D: Applied Physics;2009-05-20
2. Origin of Carrier-Type Reversal in Pb−Ge−Se Glasses: A Detailed Thermal, Electrical, and Structural Study;The Journal of Physical Chemistry B;1997-11-01
3. Electron paramagnetic resonance study of Mn2+ and Cu2+ spin probes in (Ag2S)x(GeS2)1 - x glasses;Journal of Non-Crystalline Solids;1996-11
4. Electronic conduction in MeV energy ion-beam irradiated semiconducting glass Pb20Ge19Se61;Philosophical Magazine B;1995-10
5. Minimum fragility in GexSe80−xPb20 glasses;Physica B: Condensed Matter;1995-03
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