Electronic conduction in MeV energy ion-beam irradiated semiconducting glass Pb20Ge19Se61-Reference-Cited by-同舟云学术

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Electronic conduction in MeV energy ion-beam irradiated semiconducting glass Pb20Ge19Se61

Published:1995-10 Issue:4 Volume:72 Page:417-433
ISSN:1364-2812
Container-title:Philosophical Magazine B
language:en
Short-container-title:Philosophical Magazine B

Author:

Bhatia K. L.¹,Singh Partap²,Kishore Nawal¹,Malik S. K.³

Affiliation:

1. a Non-Crystalline Semiconductor Laboratory, Physics Department , Maharshi Dayanand University , Rohtak , 124 001 , India

2. b Physics Department , Government College , Bhiwani , 125 021 , India

3. c Physics Department , AIJHM College , Rohtak , 124 001 , India

Publisher

Informa UK Limited

Subject

General Physics and Astronomy,General Chemical Engineering

Link

https://www.tandfonline.com/doi/pdf/10.1080/13642819508239096

Reference28 articles.

1. Defect diffusion in ion implanted glasses

2. Defect production and annealing due to high-energy ion implantation

3. A Monte Carlo computer program for the transport of energetic ions in amorphous targets

4. Bismuth-doped amorphous germanium sulfide semiconductors

5. Optical Spectra of Amorphous Semiconductors in the System PbGeSe Exhibiting p-n Transition

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Frequency dependence of dielectric constants of Ag doped Se-Bi-Te system;AIP Conference Proceedings;2013

2. Structure and electrical properties of Bi5GexSe95−x thin films;Current Applied Physics;2012-03

3. Electronic conduction in 40 MeV28Si5+ion irradiated Se-Te-Pb thin films;The European Physical Journal Applied Physics;2005-04-14

4. Electrical properties of amorphous Se70Ge30−xMx system, where M represents silver, cadmium or lead;Vacuum;2005-02

5. 40 MeV 28Si5+ ion induced blue shift in the optical band gap of amorphous Se80−xTe20Pbx thin films;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2003-11

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