Bismuth-doped amorphous germanium sulfide semiconductors
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.34.8786/fulltext
Reference21 articles.
1. Electrical transport in layered crystalline semiconductors GeS doped with Ag, P impurities at high pressure
2. Bilevel high resolution photolithographic technique for use with wafers with stepped and/or reflecting surfaces
3. Pressure-induced structural transformations in Bi-doped amorphous germanium sulfide
4. Electrical transport in Bi doped n-type amorphous semiconductors (GeSe3.5)100−xBix at high pressure
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