Electrical transport in Bi doped n-type amorphous semiconductors (GeSe3.5)100−xBix at high pressure
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference6 articles.
1. Structural changes induced by Bi doping in n-type amorphous (GeSe3.5) 100−xBix
2. High pressure clamp for electrical measurements up to 8 GPa and temperature down to 77 K
3. Topology of covalent non-crystalline solids II: Medium-range order in chalcogenide alloys and ASi(Ge)
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1. Conversion of p–n conduction type by spinodal decomposition in Zn-Sb-Bi phase-change alloys;NPG Asia Materials;2020-02-14
2. Photoacoustic measurement of the thermal diffusivity of Bi added Ge–Se and Ge–Se–Te glasses;Solid State Communications;1998-09
3. Electrical transport in the Ge1-xSe2Sbxsystem;Semiconductor Science and Technology;1991-09-01
4. Pressure dependence of capacitance and conductance for a-Ge17Te83 at moderate temperatures;Physica Status Solidi (a);1989-09-16
5. Impurity states in Sb‐doped amorphous semiconductors;Journal of Applied Physics;1987-09-15
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