Structural changes induced by Bi doping in n-type amorphous (GeSe3.5) 100−xBix
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference5 articles.
1. Electronic properties of substitutionally doped amorphous Si and Ge
2. 8th Int. Conf. on Amorphous and Liquid Semiconductors;Nagels,1981
3. Optical-Absorption Edge and Raman Scattering inGexSe1−xGlasses
4. First evidence for vibrational excitations of large atomic clusters in amorphous semiconductors
5. The increase in the conductivity of chalcogenide glasses by the addition of certain impurities
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