Temperature and thickness dependence of photoconductivity and density-of-states distribution for Bi doped Ge20S80
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference25 articles.
1. Constraint theory and carrier-type reversal in Bi-Ge chalcogenide alloy glasses
2. Bismuth-doped amorphous germanium sulfide semiconductors
3. Bilevel high resolution photolithographic technique for use with wafers with stepped and/or reflecting surfaces
4. Effect of transition metal impurity MN on the electronic properties of amorphous semiconductor Ge20S80 − xBix
5. Evidence of two Bi sites from EPR ofMn2+in Bi-doped amorphous germanium chalcogenides
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1. Broadband Photosensitive Medium Based on Amorphous Equichalcogenides;ACS Applied Electronic Materials;2022-11-01
2. Ion irradiation-induced modifications in the surface morphology of Ge20Se74Bi6 thin films;Journal of Alloys and Compounds;2008-08
3. Electrical conductivity and thermoelectric power of a-Ge20 Se80 − x Bi x thin films;Journal of Electroceramics;2006-07
4. Optical study of ion-induced effects in Ge20Se80−xBix thin films;Optical Materials;2004-12
5. Electrical and Optical Studies in Ge100-xSxChalcogenide Thin Films;Acta Physica Polonica A;2001-06
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