Frequency dependent electrical transport in bismuth-modified amorphous germanium sulfide semiconductors
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference28 articles.
1. Electrical transport in layered crystalline semiconductors GeS doped with Ag, P impurities at high pressure
2. Bismuth-doped amorphous germanium sulfide semiconductors
3. Pressure-induced structural transformations in Bi-doped amorphous germanium sulfide
4. Effect of transition metal impurity MN on the electronic properties of amorphous semiconductor Ge20S80 − xBix
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