Optical constants of doped n-type vitreous semiconductors (GeSe3.5)100−xBix
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference15 articles.
1. Electrical and optical properties ofn‐type semiconducting chalcogenide glasses in the system Ge‐Bi‐Se
2. Structural changes induced by Bi doping in n-type amorphous (GeSe3.5) 100−xBix
3. On the glass formation tendency in (PbS)x·(M2S3)1−x (M = As, Sb)
4. Electrical transport in Bi doped n-type amorphous semiconductors (GeSe3.5)100−xBix at high pressure
5. Study of effects of dopants on structure of vitreous semiconductors (GeSe3.5)100-xMx (M = Bi, Sb) using high pressure techniques
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1. Dual-Frequency Plasma Enhanced Chemical Vapor Deposition of Diamond-Like Carbon Thin Films;Acta Physica Polonica A;2012-07
2. Kinetic studies of bulk Ge22Se78-xBix (x=0, 4 and 8) semiconducting glasses;Journal of Thermal Analysis and Calorimetry;2001
3. Structural interpretation of the infrared spectrum of a Sb0.05As0.45Se0.50 glassy semiconductor;Materials Letters;2000-02
4. The effects of Sn and Bi additions on properties and structure in Ge-Se-Te chalcogenide glass;Journal of Non-Crystalline Solids;1995-11
5. Optical Spectra of Amorphous Semiconductors in the System PbGeSe Exhibiting p-n Transition;physica status solidi (b);1991-11-01
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