Study of effects of dopants on structure of vitreous semiconductors (GeSe3.5)100-xMx (M = Bi, Sb) using high pressure techniques
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference16 articles.
1. States in the gap and recombination in amorphous semiconductors
2. Prediction of the influence of additives on the density of valence-alternation centres in lone-pair semiconductors
3. The effect of charged additives on the carrier concentrations in lone-pair semiconductors
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