The effect of charged additives on the carrier concentrations in lone-pair semiconductors-Reference-Cited by-同舟云学术

The effect of charged additives on the carrier concentrations in lone-pair semiconductors

Published:1978-03 Issue:3 Volume:37 Page:285-292
ISSN:1364-2812
Container-title:Philosophical Magazine B
language:en
Short-container-title:Philosophical Magazine B

Author:

Fritzsche H.¹,Kastner M.²

Affiliation:

1. a Department of Physics , The James Franck Institute, The University of Chicago , Chicago , Illinois , 60637 , U.S.A.

2. b Physics Department and Center for Materials Science and Engineering, MIT , Cambridge , Massachusetts , 02139 , U.S.A.

Publisher

Informa UK Limited

Subject

General Physics and Astronomy,General Chemical Engineering

Link

https://www.tandfonline.com/doi/pdf/10.1080/01418637808227669

Reference12 articles.

1. Fritzsche , H. 1973. “Electronic and Structural Properties of Amorphous Semiconductors”. Edited by: LeComber , P. G. and Mort , J. 55London: Academic Press.

2. Fritzsche , H. and Paesler , M. A. 1976. “Structure and Excitations of Amorphous Solids”. Edited by: Lucovsky , G. and Galeener , F. L. 178New York: Institute of Physics. 1977,Proceedings of the Seventh International Conference on Amorphous and Liquid Semiconductors, Edinburgh. (We wish to note here that the erratum inserted next to fig. 7 of this conference paper should be disregarded because the equations are correct as they appear in the paper

3. Prediction of the influence of additives on the density of valence-alternation centres in lone-pair semiconductors

4. Valence-Alternation Model for Localized Gap States in Lone-Pair Semiconductors

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