Prediction of the influence of additives on the density of valence-alternation centres in lone-pair semiconductors
Author:
Affiliation:
1. a Physics Department and Center for Materials Science and Engineering , Massachusetts Institute of Technology , Cambridge , Massachusetts , U.S.A
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/13642817808245313
Reference17 articles.
1. Model for the Electronic Structure of Amorphous Semiconductors
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