Mn-impurity-induced simple pair defect states in Bi-modified amorphous semiconductors Ge20S79·5-xBixMn0·5
Author:
Affiliation:
1. a Department of Physics , Mahrshi Dayanand University , Rohtak , 124001 , India
2. b Department of Physics , Vaish College , Bhiwani , India
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/13642819008207859
Reference17 articles.
1. Photoacoustic spectra of amorphous semiconductors Ge20S80−xBix
2. Evidence of two Bi sites from EPR ofMn2+in Bi-doped amorphous germanium chalcogenides
3. Bismuth-doped amorphous germanium sulfide semiconductors
4. Carrier-sign reversal in Bi-doped bulk amorphous semiconductorsGe20Te80−xBix
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1. Dielectric relaxation in Ge1−xSe2Pbx (x=0, 0.2 and 0.6) nano-crystalline system;Materials Chemistry and Physics;2004-05
2. Study of the effect of thermal annealing on the optical and electrical properties of vacuum evaporated amorphous thin films in the system Ge20Te80-xBix;Semiconductor Science and Technology;2002-02-18
3. Role of Metal Impurity 'Bi' in Amorphous Chalcogenide Semiconductors;Solid State Phenomena;1999-10
4. Effect of the addition of the impurity Mn on the electronic properties of the amorphous semiconductor (Se70Te30)99·9Mn0·1;Philosophical Magazine B;1996-09
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