Performance optimization of InGaAs power LDMOSFET
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference14 articles.
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2. Power Electronics Handbook;Rashid,2010
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2. Effect of Dummy Gate Bias on Breakdown Voltage and Gate Charge of a Novel In0.53Ga0.47As/InP Trench-Gate Pentode Power Device;IEEE Transactions on Device and Materials Reliability;2023-06
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