High-speed SOI junctionless transistor based on hybrid heterostructure of Si/Si0.5Ge0.5 and asymmetric spacers with outstanding analog/RF parameters
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Materials Science,General Chemistry
Link
https://link.springer.com/content/pdf/10.1007/s00339-021-05153-w.pdf
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3. R. Kumar, A. Kumar, Hafnium based high-k dielectric gate-stacked (GS) gate material engineered (GME) junctionless nanotube MOSFET for digital applications. Appl. Phys. A 127(1), 1–10 (2021)
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