Effect of Dummy Gate Bias on Breakdown Voltage and Gate Charge of a Novel In<sub>0.53</sub>Ga<sub>0.47</sub>As/InP Trench-Gate Pentode Power Device-Reference-Cited by-同舟云学术

Effect of Dummy Gate Bias on Breakdown Voltage and Gate Charge of a Novel In_0.53Ga_0.47As/InP Trench-Gate Pentode Power Device

Published:2023-06 Issue:2 Volume:23 Page:269-275
ISSN:1530-4388
Container-title:IEEE Transactions on Device and Materials Reliability
language:
Short-container-title:IEEE Trans. Device Mater. Relib.

Author:

Sahoo Jagamohan¹^ORCID,Mahapatra Rajat¹^ORCID

Affiliation:

1. Department of Electronics and Communication Engineering, National Institute of Technology Durgapur, Durgapur, India

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Safety, Risk, Reliability and Quality,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/7298/10145596/10106087.pdf?arnumber=10106087

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3. Energy-band alignment of HfO2∕SiO2∕SiC gate dielectric stack

4. Characterization of thermally oxidized Ti∕SiO2 gate dielectric stacks on 4H–SiC substrate

5. Gate-Drain Charge Analysis for Switching in Power Trench MOSFETs

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