Energy-band alignment of HfO2∕SiO2∕SiC gate dielectric stack
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2839314
Reference15 articles.
1. Al2O3 prepared by atomic layer deposition as gate dielectric on 6H-SiC(0001)
2. HfO2-based insulating stacks on 4H–SiC(0001)
3. Characterization of High-k Ta[sub 2]Si Oxidized Films on 4H-SiC and Si Substrates as Gate Insulator
4. Characterization of thermally oxidized Ti∕SiO2 gate dielectric stacks on 4H–SiC substrate
5. Improved high-field reliability for a SiC metal–oxide–semiconductor device by the incorporation of nitrogen into its HfTiO gate dielectric
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