A New Gate-Trench Junctionless SiC Power MOSFET: Performance Assessement and Circuit Level Investigation
Author:
Affiliation:
1. University of Batna 2,Advanced Electronics Laboratory (LEA),Batna,Algeria
2. ISTA University of Larbi Ben M’hidi, Oum El Bouaghi,Oum El Bouaghi,Algeria
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10332458/10332802/10332810.pdf?arnumber=10332810
Reference23 articles.
1. A Review of Power Electronic Devices for Heavy Goods Vehicles Electrification: Performance and Reliability
2. A 2.2kV Organic Semiconductor- Based Lateral Power Device
3. On the Techniques to Utilize SiC Power Devices in High- and Very High-Frequency Power Converters
4. High-Responsivity MSM Solar-Blind UV Photodetector Based on Annealed ITO/Ag/ITO Structure Using RF Sputtering
5. A novel trench gate floating islands power MOSFET (TG-FLIMOSFET): Two-dimensional simulation study
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