Author:
Adhikari Manoj Singh,Patel Raju,Verma Yogesh Kumar,Singh Yashvir
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Reference20 articles.
1. Saxena RS, Kumar MJ (2012) Trench gate power MOSFET: Recent advances and innovations. Advances microelectronics and photonics, 1. Nova Science Publishers, Hauppauge, pp 1–23
2. Steighner JB, Yuan JS, Liu Y (2011) Simulation and analysis of InGaAs power MOSFET performances and reliability. IEEE Trans on Electron Devices 58(1):180–189
3. Waldron N, Kim DH, Del Alamo JA (2010) A self-aligned InGaAs HEMT architecture for logic applications. IEEE Trans Electron Devices 57(1):297–304
4. Adhikari MS, Singh Y (2017) High performance multi-channel MOSFET on InGaAs for RF amplifiers. Superlattice Microst 102:79–87
5. Adhikari MS, Singh Y (2015) A nanoscale dual-channel trench (DCT) MOSFET for analog/RF applications. Superlattice Microst 88:567–573
Cited by
6 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献