Effect of hydrofluorocarbon structure of C3H2F6 isomers on high aspect ratio etching of silicon oxide-Reference-Cited by-同舟云学术

Effect of hydrofluorocarbon structure of C3H2F6 isomers on high aspect ratio etching of silicon oxide

Published:2022-10 Issue: Volume:600 Page:154050
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Tak Hyun Woo,Lee Hye Joo,Wen Long,Kang Byung Jin,Sung Dain,Bae Jeong Woon,Kim Dong Woo,Lee Wonseok,Lee Seung Bae,Kim Keunsuk,Cho Byeong Ok,Kim Young Lea,Song Han Dock,Yeom Geun Young

Funder

Korea Institute of Energy Technology Evaluation and Planning

Ministry of Trade, Industry and Energy

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference33 articles.

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4. Formation mechanism of sidewall striation in high-aspect-ratio hole etching;Omura;Jpn. J. Appl. Phys.,2019

5. Study on contact distortion during high aspect ratio contact SiO2 etching;Kim;J. Vac. Sci. Technol. A.,2015

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