Progress in nanoscale dry processes for fabrication of high-aspect-ratio features: How can we control critical dimension uniformity at the bottom?-Reference-Cited by-同舟云学术

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Progress in nanoscale dry processes for fabrication of high-aspect-ratio features: How can we control critical dimension uniformity at the bottom?

Published:2018-05-25 Issue:6S2 Volume:57 Page:06JA01
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Ishikawa Kenji^ORCID,Karahashi Kazuhiro^ORCID,Ishijima Tatsuo^ORCID,Cho Sung Il,Elliott Simon,Hausmann Dennis,Mocuta Dan,Wilson Aaron,Kinoshita Keizo

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/57/i=6S2/a=06JA01/pdf

Reference242 articles.

1. Silicon Nanoelectronics

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