CDSAXS study of 3D NAND channel hole etch pattern edge effects and etched hole pattern variance-Reference-Cited by-同舟云学术

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CDSAXS study of 3D NAND channel hole etch pattern edge effects and etched hole pattern variance

Published:2024-04-10 Issue: Volume:69222E Page:119
ISSN:
Container-title:Metrology, Inspection, and Process Control XXXVIII
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Author:

Zhang Jin,Lan Tian,Gao Ying,Sorkhabi Osman,Lin Yung-Yi,Li Maggie,Oak Dave,Tan Zhengquan

Publisher

SPIE

Reference11 articles.

1. 2022 and beyond memory technology, insights, analysis;Jeongdong;Tech Insights,2022

2. Progress report on high aspect ratio patterning for memory devices

3. Determining the shape and periodicity of nanostructures using small-angle X-ray scattering

4. Small angle x-ray scattering measurements of lithographic patterns with sidewall roughness from vertical standing waves

5. CD-SAXS measurements using laboratory-based and synchrotron-based instruments;Wang,2008

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