Formation mechanism of sidewall striation in high-aspect-ratio hole etching-Reference-Cited by-同舟云学术

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Formation mechanism of sidewall striation in high-aspect-ratio hole etching

Published:2019-05-17 Issue:SE Volume:58 Page:SEEB02
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Omura Mitsuhiro,Hashimoto Junichi,Adachi Takahiro,Kondo Yusuke,Ishikawa Masao,Abe Junko,Sakai Itsuko,Hayashi Hisataka,Sekine Makoto,Hori Masaru

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

https://iopscience.iop.org/article/10.7567/1347-4065/ab163c/pdf

Reference34 articles.

1. Transformation of Dense Contact Holes during SiO2Etching

2. Investigation of Bowing Reduction in SiO2Etching Taking into Account Radical Sticking in a Hole

3. Effects of Mask and Necking Deformation on Bowing and Twisting in High-Aspect-Ratio Contact Hole Etching

4. Study on contact distortion during high aspect ratio contact SiO2 etching

Cited by 24 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of bias voltage on the Ar/CH₂F₂/O₂ plasma etching of Si₃N₄ films;Japanese Journal of Applied Physics;2024-08-01

2. Autonomous hybrid optimization of a SiO2 plasma etching mechanism;Journal of Vacuum Science & Technology A;2024-06-28

3. Precise and practical 3D topography simulation of high aspect ratio contact hole etch by using model optimization algorithm;Journal of Vacuum Science & Technology A;2024-06-10

4. Future of plasma etching for microelectronics: Challenges and opportunities;Journal of Vacuum Science & Technology B;2024-06-07

5. High aspect ratio SiO₂/SiN (ON) stacked layer etching using C₃HF₅, C₄H₂F₆, and C₄H₄F₆;Japanese Journal of Applied Physics;2024-06-03

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