Reactive ion etching of indium gallium zinc oxide (IGZO) and chamber cleaning using low global warming potential gas-Reference-Cited by-同舟云学术

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Reactive ion etching of indium gallium zinc oxide (IGZO) and chamber cleaning using low global warming potential gas

Published:2024-10 Issue: Volume:671 Page:160692
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Woo Hong Jong,Woo Tak Hyun,Il Cho Nam,Joon Eoh Hyeong,Ho Kim Chan,Won Jeong Jun,Lim Kim Kyung,Jin Yoo Hee,Min Cho Hyun,Gwang Jeong Yu,Woon Jung Da,Jong Yeo Yun,Young Yeom Geun,Woo Kim Dong

Publisher

Elsevier BV

Reference40 articles.

1. 42.2: World’s Largest (15-inch) XGA AMLCD Panel Using IGZO Oxide TFT;Lee;SID Symposium Digest of Technical Papers,2008

2. Electrical and photosensitive characteristics of a-IGZO TFTs related to oxygen vacancy;Yao;IEEE Trans. Electron Devices,2011

3. Hydrogen-induced improvements in electrical characteristics of a-IGZO thin-film transistors;Tsao;Solid State Electron.,2010

4. Effect of Two-Step Annealing on High Stability of a-IGZO Thin-Film Transistor;Peng;IEEE Trans. Electron Devices,2020

5. Amorphous-InGaZnO4 thin-film transistors with damage-free back channelwet-etch process;Ryu;ECS Solid State Lett.,2012

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