Double nitridation of crystalline ZrO2/Al2O3 buffer gate stack with high capacitance, low leakage and improved thermal stability-Reference-Cited by-同舟云学术

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Double nitridation of crystalline ZrO2/Al2O3 buffer gate stack with high capacitance, low leakage and improved thermal stability

Published:2015-03 Issue: Volume:330 Page:221-227
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Huang Jhih-Jie,Tsai Yi-Jen,Tsai Meng-Chen,Lee Min-Hung,Chen Miin-Jang

Funder

Taiwan Semiconductor Manufacturing Company

National Science Council in Taiwan

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference38 articles.

1. High-κ gate dielectrics: Current status and materials properties considerations

2. Electrical and reliability characteristics of ZrO2 deposited directly on Si for gate dielectric application

3. Electrical characterization and material evaluation of zirconium oxynitride gate dielectric in TaN-gated NMOSFETs with high-temperature forming gas annealing

4. High dielectric constant gate oxides for metal oxide Si transistors

5. Tetragonal $\hbox{ZrO}_{2}/\hbox{Al}_{2}\hbox{O}_{3}$ Stack as High-$\kappa$ Gate Dielectric for Si-Based MOS Devices

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1. An overview of conventional and new advancements in high kappa thin film deposition techniques in metal oxide semiconductor devices;Journal of Materials Science: Materials in Electronics;2022-03-08

2. Research Progress of High Dielectric Constant Zirconia-Based Materials for Gate Dielectric Application;Coatings;2020-07-20

3. Leakage current lowering and film densification of ZrO2 high-k gate dielectrics by layer-by-layer, in-situ atomic layer hydrogen bombardment;Materials Science in Semiconductor Processing;2020-04

4. Atomic layer deposition of high-κ layers on polycrystalline diamond for MOS devices: a review;Journal of Materials Chemistry C;2020

5. High-K Gate Dielectrics Treated with in Situ Atomic Layer Bombardment;ACS Applied Electronic Materials;2019-06-06

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