Atomic layer deposition of high-κ layers on polycrystalline diamond for MOS devices: a review-Reference-Cited by-同舟云学术

Atomic layer deposition of high-κ layers on polycrystalline diamond for MOS devices: a review

Published:2020 Issue:38 Volume:8 Page:13127-13153
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Jaggernauth Aneeta¹²³⁴⁵^ORCID,Mendes Joana C.⁶⁷⁴⁵,Silva Rui F.¹²³⁴⁵^ORCID

Affiliation:

1. CICECO

2. Department of Materials and Ceramic Engineering

3. University of Aveiro

4. 3810-193 Aveiro

5. Portugal

6. Instituto de Telecomunicações

7. Campus Universitário de Santiago

Abstract

Working in concert, diamond layers and high-κ films impart opportunities for high performance MOS devices. Optimization hinges on their interfacial quality inciting investigation into diamond surface terminations and ALD parameters to ensure success.

Funder

Fundação para a Ciência e a Tecnologia

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2020/TC/D0TC02063J

Reference196 articles.

1. A Short History of Atomic Layer Deposition: Tuomo Suntola's Atomic Layer Epitaxy

2. Atomic Layer Deposition Chemistry: Recent Developments and Future Challenges

3. Alternative dielectrics to silicon dioxide for memory and logic devices