Author:
Ohno Yutaka,Liang Jianbo,Shigekawa Naoteru,Yoshida Hideto,Takeda Seiji,Miyagawa Reina,Shimizu Yasuo,Nagai Yasuyoshi
Funder
Japan Science and Technology Agency
Japan Society for the Promotion of Science
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference44 articles.
1. Structure of Al/Al and Al/Si3N4 interfaces bonded at room temperature by means of the surface activation method;Suga;Acta Metall. Mater.,1992
2. B. Imbert, P. Gondcharton, L. Benaissa, D. Mariolle, G. Rodriguez, C. Guedj, D. Radisson, F. Fournel, H. Moriceau, Initial stages of interface closure for metal and metal-oxide bonding, in: Book of Abstracts of the Waferbond’15 conference, 2015, pp.127–128: https://inplas.de/files/5793_Book_of_Abstract_WaferBond15_gkac48.pdf.
3. Realization of direct bonding of single crystal diamond and Si substrates;Liang;Appl. Phys. Lett.,2017
4. Surface activated bonding of GaAs and SiC wafers at room temperature for improved heat dissipation in high-power semiconductor lasers;Higurashi;Jpn. J. Appl. Phys.,2015
5. Silicon carbide wafer bonding by modified surface activated bonding method;Suga;Jpn. J. Appl. Phys.,2015
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