Simple Low-Temperature GaN/Diamond Bonding Process with an Atomically Thin Intermediate Layer
Author:
Affiliation:
1. Device Technology Research Institute, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8564, Japan
2. Graduate School of Science and Technology, Tokyo University of Science, Noda, Chiba 278-8510, Japan
Funder
New Energy and Industrial Technology Development Organization
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsanm.3c02002
Reference44 articles.
1. 30-W/mm GaN HEMTs by Field Plate Optimization
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