Atomic-scale simulation of ultrasonic vibration-assisted polishing process for graphene/GaN-layered composites-Reference-Cited by-同舟云学术

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Atomic-scale simulation of ultrasonic vibration-assisted polishing process for graphene/GaN-layered composites

Published:2024-06 Issue: Volume:176 Page:108323
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

He Huan,Gao Tinghong^ORCID,Liu Yutao,Chen Qian,Xie Quan,Liang Yongchao,Xiao Qingquan

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Reference76 articles.

1. Single-crystal gallium nitride nanotubes;Goldberger;Nature,2003

2. An overview of normally-off GaN-based high electron mobility transistors;Roccaforte;J. Mater.,2019

3. A comprehensive review of recent progress on GaN high electron mobility transistors: devices, fabrication and reliability;Zeng;Electronics,2018

4. Growth of bulk GaN crystals;Kucharski;J. Appl. Phys.,2020

5. Gallium nitride power devices in power electronics applications: state of art and perspectives;Musumeci;Energies,2023

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