Growth of bulk GaN crystals-Reference-Cited by-同舟云学术

Growth of bulk GaN crystals

Published:2020-08-07 Issue:5 Volume:128 Page:050902
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Kucharski R.¹^ORCID,Sochacki T.¹^ORCID,Lucznik B.¹^ORCID,Bockowski M.¹²^ORCID

Affiliation:

1. Institute of High Pressure Physics Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland

2. Center for Integrated Research of Future Electronics, Institute of Materials and Systems for Sustainability, Nagoya University, C3-1 Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan

Funder

Polish National Science Center

Foundation for Polish Science

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0009900

Reference62 articles.

1. THE PREPARATION AND PROPERTIES OF VAPOR‐DEPOSITED SINGLE‐CRYSTAL‐LINE GaN

2. A modern perspective on the history of semiconductor nitride blue light sources

3. GaN Power Devices – Current Status and Future Directions

4. Congruent melting of gallium nitride at 6 GPa and its application to single-crystal growth

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