Realization of direct bonding of single crystal diamond and Si substrates
Author:
Affiliation:
1. Electronic Information System, Osaka City University, 3-3-138 Sugimoto, Sumiyoshi, Osaka 558-8585, Japan
2. Department of Electrical and Electronic Engineering, Saga University, Honjo-machi 1, Saga 840-8502, Japan
Funder
Ministry of Education, Culture, Sports, Science and Technology (MEXT)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Reference21 articles.
1. A. T. Collins , in Properties and Growth of Diamond, edited by G. Davies ( Inspec, London, 1994).
2. High Carrier Mobility in Single-Crystal Plasma-Deposited Diamond
3. Electron effective masses and lattice scattering in natural diamond
4. Hole-drift velocity in natural diamond
5. E. Kohn and W. Ebert , in Low-Pressure Synthetic Diamond, edited by B. Dishcler and C. Wild ( Springer, Berlin, 1998).
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