Understanding of multiway heat extraction using peripheral diamond in an AlGaN/GaN high electron mobility transistor by electrothermal simulations

Abstract

Abstract High-power operation of high electron mobility transistors (HEMTs) is limited due to a variety of thermal resistances in HEMT devices that cause self-heating effects (SHEs). To reduce SHEs, diamond heat spreaders integrated in the device have proven efficient in extracting heat from the device. In this report, we use electrothermal technology computer-aided design simulations to demonstrate a qualitative understanding of multiway heat extraction utilizing diamond heat spreaders to improve HEMT thermal performance at high DC output power densities (∼40 W mm−1). The impact of each heat extraction pathway is understood while considering the thermal boundary resistance between the diamond/GaN heterointerface and optimization of the GaN buffer layer thickness. Using these findings, we simulate an AlGaN/GaN HEMT device operating at 40 W mm−1 DC output power and demonstrate significant reduction in the temperature.