Surface activated bonding of GaAs and SiC wafers at room temperature for improved heat dissipation in high-power semiconductor lasers
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/54/i=3/a=030207/pdf
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1. A CW external-cavity surface-emitting laser
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3. Comparison of thermal management techniques for semiconductor disk lasers
4. Semiconductor wafer bonding via liquid capillarity
5. Surface activated bonding of silicon wafers at room temperature
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